74.7% Efficient GaAs-Based Laser Power Converters at 808 nm at 150 K
نویسندگان
چکیده
High-efficiency multijunction laser power converters are demonstrated for low temperature applications with an optical input at 808 nm. The photovoltaic converting III-V semiconductor devices designed GaAs absorbing layers, here 5 thin subcells (PT5), connected by transparent tunnel junctions. Unprecedented conversion efficiencies of up to 74.7% measured temperatures around 150 K. At 77 K, a remarkably bandgap offset value Woc = 71 mV is obtained intensity ~7 W/cm2. the PT5 retains efficiency 65% 0.3 W converted output power.
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ژورنال
عنوان ژورنال: Photonics
سال: 2022
ISSN: ['2304-6732']
DOI: https://doi.org/10.3390/photonics9080579